型号 IPI111N15N3 G
厂商 Infineon Technologies
描述 MOSFET N-CH 150V 83A TO262-3
IPI111N15N3 G PDF
代理商 IPI111N15N3 G
标准包装 500
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 150V
电流 - 连续漏极(Id) @ 25° C 83A
开态Rds(最大)@ Id, Vgs @ 25° C 11.1 毫欧 @ 83A,10V
Id 时的 Vgs(th)(最大) 4V @ 160µA
闸电荷(Qg) @ Vgs 55nC @ 10V
输入电容 (Ciss) @ Vds 3230pF @ 75V
功率 - 最大 214W
安装类型 通孔
封装/外壳 TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装 PG-TO262-3
包装 管件
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